1. Intensify the application of ZnO-based nanodevices in humid environment: O2/H2 plasma suppressed the spontaneous reaction of amorphous ZnO nanowires.

    Nanoscale Research Letters 9(1):281 (2014) PMID 24948898 PMCID PMC4058705

    In this work, we have demonstrated that amorphous ZnO nanobranches (a-ZnO NBs) could spontaneously react from the crystalline ZnO NWs (c-ZnO NWs) at specific humid environment. The spontaneous reaction mechanism and result can be analyzed by humidity controlling and optical microscope (OM)/scann...
  2. Nonpolar electrical switching behavior in Cu–Si(Cu)Ox–Pt stacks

    Thin Solid Films 544:134 (2013)

    Electrical switching of resistive memory is highly interface-dependent. We studied such a switching of Cu-doped amorphous SiOx thin-films in a sandwich stack Cu/Si(Cu)Ox/Pt. The stacks were prepared using radio frequency sputtering except Cu co-doping which utilized direct current (DC)...
  3. Nonpolar electrical switching behavior in Cu–Si(Cu)Ox–Pt stacks

    Thin Solid Films 544:134 (2013)

    Electrical switching of resistive memory is highly interface-dependent. We studied such a switching of Cu-doped amorphous SiOx thin-films in a sandwich stack Cu/Si(Cu)Ox/Pt. The stacks were prepared using radio frequency sputtering except Cu co-doping which utilized direct current (DC)...
  4. Nonpolar electrical switching behavior in Cu–Si(Cu)Ox–Pt stacks

    Thin Solid Films 544:134 (2013)

    Electrical switching of resistive memory is highly interface-dependent. We studied such a switching of Cu-doped amorphous SiOx thin-films in a sandwich stack Cu/Si(Cu)Ox/Pt. The stacks were prepared using radio frequency sputtering except Cu co-doping which utilized direct current (DC)...
  5. Nonpolar electrical switching behavior in Cu–Si(Cu)Ox–Pt stacks

    Thin Solid Films 544:134 (2013)

    Electrical switching of resistive memory is highly interface-dependent. We studied such a switching of Cu-doped amorphous SiOx thin-films in a sandwich stack Cu/Si(Cu)Ox/Pt. The stacks were prepared using radio frequency sputtering except Cu co-doping which utilized direct current (DC)...
  6. Electrode effect on resistive switching of Ti-added amorphous SiOxfilms

    Thin Solid Films 518(24):7352 (2010)

    Ti-added amorphous SiO x films were sputter-deposited into stacks of Pt/SiO x /Pt and Cu/SiO x /Pt. Optimally prepared Pt/SiO x /Pt exhibits unipolar resistive switching over 10 2 cycles, resistance...
  7. A genome-wide RNA interference screen in Drosophila melanogaster cells for new components of the Hh signaling pathway.

    Nature Genetics 37(12):1323 (2005) PMID 16311596

    Members of the Hedgehog (Hh) family of signaling proteins are powerful regulators of developmental processes in many organisms and have been implicated in many human disease states. Here we report the results of a genome-wide RNA interference screen in Drosophila melanogaster cells for new compo...
  8. Testis-specific TAF homologs collaborate to control a tissue-specific transcription program.

    Development 131(21):5297 (2004) PMID 15456720

    Alternate forms of the PolII transcription initiation machinery have been proposed to play a role in selective activation of cell-type-specific gene expression programs during cellular differentiation. The cannonball (can) gene of Drosophila encodes a homolog of a TBP-associated factor (dTAF5) p...